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RB731XN
Diodes
Rev.B 2/3
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DIPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.001
0.01
0.1
1
10
100
1000
01020300.1
0 5 10 15 20 25 30 35
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0
1
2
3
4
5
6
7
8
9
10
AVE:2.52pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
AVE:7.30A
8.3ms
Ifsm
1cyc
0
5
10
15
20
1101001
8.3ms
8.3ms
Ifsm
1cyc
0
1
2
3
4
5
6
7
8
9
10
10
100
t
Ifsm
0.00
0.01
0.02
0.03
0.04
0.00 0.01 0.02 0.03 0.04 0.05
Sin(θ＝180)
D=1/2
DC
0
0.001
0.002
0.003
0102030
Sin(θ＝180)
DC
1
10
f=1MHz
250
260
270
280
290
300
AVE:267.4mV
Ta=25℃
IF=1mA
n=30pcs
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
』Electrical characteristic curves
AVE:0.083nA
Ta=25℃
VR=10V
n=30pcs
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
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